ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1719-8 8 watts, 28 volts, class c microwave 1700 - 1900 mhz general description the 1719-8 is a common base transistor capable of providing 8 watts, class c output power over the band 1750-1850 mhz. the transistor includes input prematching for full broadband capabiliy. gold metalizaton and diffused ballasting are used to provide high reliability and supreme ruggedness. the transistor uses a fully hermetic high temperature solder sealed package. case outline 55lv, style 1 absolute maximum ratings maximum power dissipation @ 25 c 30 watts o maximum voltage and current bvces collector to emitter voltage 50 volts bvebo emitter to base voltage 3.5 volts ic collector current 2.0 amps maximum temperatures storage temperature - 65 to + 200 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr 1 power out power input power gain efficiency load mismatch tolerance f = 1750 -1850 mhz vcc = 28 volts pout = 8.0 watts 8.0 7.0 40 1.75 10:1 watts watts db % bvces bvebo hfe cob q jc collector to emitter breakdown emitter to base breakdown current gain output capacitance thermal resistance ic = 10 ma ie = 5 ma vce = 5v, ic = 500 ma vcb = 28v, f = 1 mhz tc = 25 c o 50 3.5 20 15 120 5.8 volts volts pf c/w o issue february 1996
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